Nuclear Spins of Ionized Phosphorus Donors in Silicon

被引：34

作者：

Dreher, Lukas ^{[1
]}

Hoehne, Felix ^{[1
]}

Stutzmann, Martin ^{[1
]}

Brandt, Martin S. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 02期

关键词：

ELECTRON-SPIN; RESONANCE; MEMORY; READOUT;

D O I：

10.1103/PhysRevLett.108.027602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate the coherent control and electrical readout of ionized phosphorus donor nuclear spins in Si-nat. By combining time-programed optical excitation with coherent electron spin manipulation, we selectively ionize the donors depending on their nuclear spin state, exploiting a spin-dependent recombination process at the Si=SiO2 interface, and find a nuclear spin coherence time of 18 ms for the ionized donors. The presented technique allows for spectroscopy of ionized-donor nuclear spins and enhances the sensitivity of electron nuclear double resonance to a level of 3000 nuclear spins.

引用

页数：5

共 37 条

[1] Charge state control and relaxation in an atomically doped silicon device [J].

Andresen, Seren E. S. ;

Brenner, Rolf ;

Wellard, Cameron J. ;

Yang, Changyi ;

Hopf, Toby ;

Escott, Christopher C. ;

Clark, Robert G. ;

Dzurak, Andrew S. ;

Jamieson, David N. ;

Hollenberg, Lloyd C. L. .

NANO LETTERS, 2007, 7 (07) :2000-2003

[2] Theory of time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance [J].

Boehme, C ;

Lips, K .

PHYSICAL REVIEW B, 2003, 68 (24)

[3]

Boehme C, 2002, PHYS STATUS SOLIDI B, V233, P427, DOI 10.1002/1521-3951(200210)233:3<427::AID-PSSB427>3.0.CO

[4]

2-J

[5] Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface:: Theory [J].

De Sousa, Rogerio .

PHYSICAL REVIEW B, 2007, 76 (24)

[6] Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon [J].

Dreher, L. ;

Hilker, T. A. ;

Brandlmaier, A. ;

Goennenwein, S. T. B. ;

Huebl, H. ;

Stutzmann, M. ;

Brandt, M. S. .

PHYSICAL REVIEW LETTERS, 2011, 106 (03)

[7] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[8] A quantum memory intrinsic to single nitrogen-vacancy centres in diamond [J].

Fuchs, G. D. ;

Burkard, G. ;

Klimov, P. V. ;

Awschalom, D. D. .

NATURE PHYSICS, 2011, 7 (10) :789-793

[9]

Fuechsle M, 2010, NAT NANOTECHNOL, V5, P502, DOI [10.1038/NNANO.2010.95, 10.1038/nnano.2010.95]

[10]

HOEHNE F, ARXIV11115149

← 1 2 3 4 →