Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

被引：68

作者：

Ghosh, S ^{[1
]}

Bhattacharya, P

Stoner, E

Singh, J

Jiang, H

Nuttinck, S

Laskar, J

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Broadcom Corp, Irvine, CA 92619 USA

[3] Georgia Inst Technol, Dept Elect Engn, Ctr Microelect Res, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1391401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from similar to 8x10(-29) cm(6)/s at 100 K to similar to 4x10(-29) cm(6)/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers. (C) 2001 American Institute of Physics.

引用

页码：722 / 724

页数：3

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