Calculation of electronic states of Si(337) surface

被引：6

作者：

Jia, Y ^{[1
]}

Ma, BX ^{[1
]}

Shen, SG ^{[1
]}

Yang, SE ^{[1
]}

机构：

[1] Zhengzhou Univ, Phys Mat Lab, Zhengzhou 450052, Peoples R China

来源：

ACTA PHYSICA SINICA-OVERSEAS EDITION | 1999年 / 8卷 / 01期

关键词：

D O I：

10.1088/1004-423X/8/1/008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the scattering-theoretic method and employing the nearest-neighbor tight-binding formalism to describe the bulk electronic structure, we have studied the electronic structure of Si(337) surface. The wave-vector-resolved layer densities of states are presented. The results show that; there are six surface bound states in the range from -12.0 to 2.0 ev. Some properties of these surface states are discussed.

引用

页码：46 / 51

页数：6

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