Technical obstacles to thin film transistor circuits on plastic

被引：14

作者：

Miyasaka, Mitsutoshi ^{[1
]}

Hara, Hiroyuki ^{[2
]}

Karaki, Nobuo ^{[2
]}

Inoue, Satoshi ^{[2
]}

Kawai, Hideyuki ^{[1
]}

Nebashi, Satoshi ^{[1
]}

机构：

[1] Seiko Epson Corp, Adv Prod Dev Dept, Nagano 3990293, Japan

[2] Seiko Epson Corp, Frontier Device Res Ctr, Nagano 3990293, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 06期

关键词：

thin film transistor; plastic; flexible device; Joule's heat; self-heating; scaling; thermal strain; mechanical strain; durability;

D O I：

10.1143/JJAP.47.4430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two main technical obstacles must be overcome to build a fruitful business in the nascent flexible microelectronics industry: the self-heating effect of thin film transistors (TFTs), and the thermal and mechanical durability of flexible devices. The self-heating effect is controlled through TFT shape, TFT electrical performance, dimensional reductions, and energy-efficient circuits. Plastic engineering is one of the keys to solving thermal and mechanical durability problems faced by flexible microelectronics devices. Once these obstacles are cleared, TFT circuits on plastic will spawn a new industry and markets for plastic large-scale integrations.

引用

页码：4430 / 4435

页数：6

共 21 条

[1] ABE K, 2007, 14 INT DISPL WORKSH, P1779
[2] [Anonymous], SID S
[3] FRENCH I, 2005, SID S, V36, P1634, DOI DOI 10.1889/1.2036327
[4] Flexible active-matrix displays and shift registers based on solution-processed organic transistors
Gelinck, GH
Huitema, HEA
Van Veenendaal, E
Cantatore, E
Schrijnemakers, L
Van der Putten, JBPH
Geuns, TCT
Beenhakkers, M
Giesbers, JB
Huisman, BH
Meijer, EJ
Benito, EM
Touwslager, FJ
Marsman, AW
Van Rens, BJE
De Leeuw, DM
[J]. NATURE MATERIALS, 2004, 3 (02) : 106 - 110
[5] Electrical response of amorphous silicon thin-film transistors under mechanical strain
Gleskova, H
Wagner, S
Soboyejo, W
Suo, Z
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6224 - 6229
[6] Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors
Inoue, S
Ohshima, H
Shimoda, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11A): : 6313 - 6319
[7] INOUE S, 2004, Patent No. 3591242
[8] Karaki N., 2005, ISSCC, P272
[9] TFT technology for flexible displays
Kim, Chang-Dong
Kang, In-Byeong
Chung, In-Jae
[J]. 2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 : 1669 - 1672
[10] Kodaira T, 2005, IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, P869

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