High-efficiency GaN/AlxGa1-xN multi-quantum well light emitter grown on low-dislocation density AlxGa1-xN

被引：0

作者：

Iwaya, M ^{[1
]}

Nakamura, R ^{[1
]}

Terao, S ^{[1
]}

Ukai, T ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

AlxGa1-xN; low-temperature-interlayer; lateral growth; threading dislocation; high quality GaN/Al0.08Ga0.82N MQW;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crack-free and low-dislocation density AlxGa1-xN was developed using low-temperature-deposited interlayer technique in combination with a lateral seeding epitaxy. GaN/Al0.08Ga0.92N:Si multi-quantum well grown on the newly developed Al0.22Ga0.78N layer contains threading dislocation density less than 10(8) cm(-2). PL peak intensity increased almost two orders of magnitude.

引用

页码：833 / 836

页数：4

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