ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

被引：23

作者：

Liu, Huan ^{[1
]}

Peng, Yue ^{[1
]}

Han, Genquan ^{[1
]}

Liu, Yan ^{[1
]}

Zhong, Ni ^{[2
]}

Duan, Chungang ^{[2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

[2] East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2020年 / 15卷 / 01期

基金：

中国国家自然科学基金;

关键词：

FeFET; ZrO2; Memory; Germanium; Amorphous;

D O I：

10.1186/s11671-020-03353-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO2 on the polarization P and electrical characteristics of TaN/ZrO2/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 degrees C, TaN/ZrO2/Ge capacitors with 2.5 and 4 nm-thick amorphous ZrO2 film exhibit the stable P. It is proposed that the ferroelectric behavior originates from the migration of the voltage-driven dipoles formed by the oxygen vacancies and negative charges. FeFETs with 2.5 nm, 4 nm, and 9 nm ZrO2 demonstrate the decent memory window (MW) with 100 ns program/erase pulses. A 4-nm-thick ZrO2 FeFET has significantly improved fatigue and retention characteristics compared to devices with 2.5 nm and 9 nm ZrO2. The retention performance of the ZrO2 FeFET can be improved with the increase of the RTA temperature. An MW of similar to 0.46 V is extrapolated to be maintained over 10 years for the device with 4 nm ZrO2.

引用

页数：8

共 13 条

[1] Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures [J].

Bark, C. W. ;

Sharma, P. ;

Wang, Y. ;

Baek, S. H. ;

Lee, S. ;

Ryu, S. ;

Folkman, C. M. ;

Paudel, T. R. ;

Kumar, A. ;

Kalinin, S. V. ;

Sokolov, A. ;

Tsymbal, E. Y. ;

Rzchowski, M. S. ;

Gruverman, A. ;

Eom, C. B. .

NANO LETTERS, 2012, 12 (04) :1765-1771

[2]

Bersuker G, 2010, IEDM, P19

[3] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[4] Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation [J].

Houssa, M ;

Afanas'ev, VV ;

Stesmans, A ;

Heyns, MM .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1885-1887

[5] Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge [J].

Kojima, Eiji ;

Chokawa, Kenta ;

Shirakawa, Hiroki ;

Araidai, Masaaki ;

Hosoi, Takuji ;

Watanabe, Heiji ;

Shiraishi, Kenji .

APPLIED PHYSICS EXPRESS, 2018, 11 (06)

[6]

Liu H, 2019, P EXT ABST SSDM, P379

[7] ZrO2 Ferroelectric FET for Non-volatile Memory Application [J].

Liu, Huan ;

Wang, Chengxu ;

Han, Genquan ;

Li, Jing ;

Peng, Yue ;

Liu, Yan ;

Wang, Xingsheng ;

Zhong, Ni ;

Duan, Chungang ;

Wang, Xinran ;

Xu, Nuo ;

Liu, Tsu-Jae King ;

Hao, Yue .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) :1419-1422

[8] Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films [J].

Mukherjee, Somdutta ;

Roy, Amritendu ;

Auluck, Sushil ;

Prasad, Rajendra ;

Gupta, Rajeev ;

Garg, Ashish .

PHYSICAL REVIEW LETTERS, 2013, 111 (08)

[9] Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior [J].

Peng, Yue ;

Xiao, Wenwu ;

Han, Genquan ;

Liu, Yan ;

Wu, Jibao ;

Wang, Kuan ;

He, Yuhui ;

Yu, Zhihao ;

Wang, Xinran ;

Xu, Nuo ;

Liu, Tsu-Jae King ;

Hao, Yue .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) :1933-1936

[10] Nanoscale Ferroelectric and Piezoelectric Properties of Sb2S3 Nanowire Arrays [J].

Varghese, Justin ;

Barth, Sven ;

Keeney, Lynette ;

Whatmore, Roger W. ;

Holmes, Justin D. .

NANO LETTERS, 2012, 12 (02) :868-872

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