Convertible Green Luminescence Determined by Surface Band Bending in ZnO
被引:3
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作者:
Wang, Zilan
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Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
Wang, Zilan
[1
]
Wang, Zhigang
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Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
Wang, Zhigang
[1
]
Rahman, M. Azizar
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Univ Technol Sydney, Sch Math & Phys Sci, Ultimo, NSW 2007, AustraliaDalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
Rahman, M. Azizar
[2
]
Cuong Ton-That
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Univ Technol Sydney, Sch Math & Phys Sci, Ultimo, NSW 2007, AustraliaDalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
Cuong Ton-That
[2
]
Ling, Francis C. C.
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Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R ChinaDalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
Ling, Francis C. C.
[3
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机构:
[1] Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
[2] Univ Technol Sydney, Sch Math & Phys Sci, Ultimo, NSW 2007, Australia
[3] Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
Green luminescence (GL) of ZnO is a typical defect emission and an important research topic for defect-controlling engineering. Two kinds of spectral characteristics, namely, Gaussian GL (GGL) and fine-structure GL (FSGL), are designated from a variety of spectra. It is found that GGL and FSGL can be reversibly converted through surface modification techniques where the location of the recombination center, the surface state, or the degree of band bending is modified. This convertible feature proves that the carrier recombination could be precisely controlled by surface modification. On the other hand, the effect of surface treatment on defects has achieved an unambiguous understanding, which is beneficial to effectively improve the performance of ZnO devices.
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Heinhold, R.
Williams, G. T.
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Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, EnglandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Williams, G. T.
Cooil, S. P.
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Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Cooil, S. P.
Evans, D. A.
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Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Evans, D. A.
Allen, M. W.
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Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
机构:
Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Hu, Q.
Zhou, N.
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Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Zhou, N.
Hu, B. C.
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Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Hu, B. C.
Chen, J.
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Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Chen, J.
Zhang, Q. Y.
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Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R ChinaDalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China