A Study on Optimization Design for a High-Efficiency High-Voltage Trench Gate Field-Stop IGBT

被引：0
作者：
Ahn, Byoung Sup [1 ]
Chung, Hun-Suk [1 ]
Nahm, Eui-Seok [2 ]
Kang, Ey Goo [1 ]
机构：
[1] Far East Univ, Dept Photovolta Engn, Eumseong 369700, South Korea
[2] Far East Univ, Dept Ubiquitous IT, Eumseong 369700, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期
关键词：
IGBT; Trench; Planar; Field-Stop; NPT;
D O I：
10.1166/jnn.2016.13699
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this paper, we have analyzed the electrical characteristics of 1200 V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.
引用
收藏
页码：12839 / 12843
页数：5
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