Effect of mtallization on resonance frequency of III-Nitride SAW structures used in sensor applications

被引：0

作者：

Mueller, A. ^{[1
]}

Stefanescu, A. ^{[1
]}

Giangu, I. ^{[1
]}

Dinescu, A. ^{[1
]}

Konstantinidis, G. ^{[2
]}

机构：

[1] Natl Inst Res & Dev Microtechnol IMT, 126A 32B Erou Iancu Nicolae, Bucharest 077190, Romania

[2] FORTH IESL MRG Heraklion, Iraklion, Greece

来源：

2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION | 2017年

关键词：

Surface acoustic wave; metallization; acoustic impedance; resonance frequency; III; -; Nitrides; GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Starting from the strange behaviour of Au used as metallization for GaN/Si SAW devices, a detailed analysis on the effect of metal layers, with different physical properties and thicknesses, on the resonance frequency of the SAWs, is performed.

引用

页码：127 / 128

页数：2

共 4 条

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