Silicon-based qubit technology: progress and future prospects

被引:4
作者
Uddin, Wasi [1 ]
Khan, Biswajit [1 ]
Dewan, Sheetal [2 ]
Das, Samaresh [1 ]
机构
[1] Indian Inst Technol Delhi, Ctr Appl Res Elect, New Delhi 110016, India
[2] Indian Inst Technol Delhi, Sch Interdisciplinary Res, New Delhi 110016, India
关键词
Silicon; charge qubit; spin qubit; double quantum dot (DQD); coherence time; quantum information processing (QIP); DOUBLE-QUANTUM DOT; ELECTRON-SPIN; GATE; OSCILLATIONS; COHERENCE; TRANSPORT; READOUT; PHYSICS; NOISE; CMOS;
D O I
10.1007/s12034-021-02621-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pathbreaking advancements in the field of nanofabrication techniques have put qubit technology at the forefront of quantum computation. Thanks to Silicon (Si) with its unparalleled strong foundation in the existing classical computation, it is considered to be a promising candidate for the development of complementary metal-oxide semiconductor compatible quantum architecture. This review article vividly describes the underlying physics of the qubit operation in quantum dots. Further, the article gives an overview of the current state of the art technology and the remarkable progress made in the field of charge and spin qubits in Si and allied heterostructures in the last two decades. Emphasis has been given to address the challenges and the accomplishments made so far in the field of Si-based charge and spin qubit technology. The article also discusses the future prospects of qubit technology and the measures being adopted worldwide for the physical realization of envisioned quantum devices.
引用
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页数:20
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