Semi-analytical Solutions to the Schroedinger-Poisson Model of Electron States

被引：0
|
作者：
Barrett, J. A. [1 ]
De Souza, M. M. [2 ]
Cirstea, S. [1 ]
机构：
[1] Anglia Ruskin Univ, Dept Comp & Technol, East Rd, Cambridge CB1 1PT, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
OPTIM 2010: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON OPTIMIZATION OF ELECTRICAL AND ELECTRONIC EQUIPMENT, PTS I-IV | 2010年
关键词：
SIMULATION; EQUATIONS; TRANSISTORS; SERIES;
D O I：
10.1109/OPTIM.2010.5510544
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-analytical solutions of the non-linear Schrodinger-Poisson Model for simulation of electronic states in semiconductor devices are investigated in both two and three dimensions. Solutions of the electrostatic potential are found from solving Poisson's equation in the complex space, and subsequently used to solve Schrodinger equation. The wavefunctions and energy levels are calculated using the Evans function technique.
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页码：180 / +
页数：2
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