The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films

被引：8
作者：
Ievtushenko, A. [1 ]
Khyzhun, O. [1 ]
Karpyna, V [1 ]
Bykov, O. [1 ]
Tkach, V [2 ]
Strelchuk, V [3 ]
Kolomys, O. [3 ]
Rarata, S. [3 ]
Baturin, V [4 ]
Karpenko, O. [4 ]
Lashkarev, G. [1 ]
机构：
[1] Natl Acad Sci Ukraine, I Frantsevich Inst Problems Mat Sci, Kiev, Ukraine
[2] Natl Acad Sci Ukraine, V Bakul Inst Superhard Mat, Kiev, Ukraine
[3] NASU, V Lashkarev Inst Semicond Phys, Kiev, Ukraine
[4] NASU, Inst Appl Phys, Sumy, Ukraine
来源：
THIN SOLID FILMS | 2019年 / 669卷 / 605-612期
关键词：
Zinc oxide; Thin films; Nitrogen-aluminum doping; X-ray diffraction; Raman scattering; Photoluminescence; X-ray photoelectron spectroscopy; Radio-frequency magnetron sputtering; RAY PHOTOELECTRON-SPECTROSCOPY; BAND-STRUCTURE CALCULATIONS; ZINC-OXIDE FILMS; THIN-FILMS; ELECTRONIC-PROPERTIES; OPTICAL-PROPERTIES; CHEMICAL-STATES; SI SUBSTRATE; NITROGEN; PHOTOLUMINESCENCE;
D O I：
10.1016/j.tsf.2018.11.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Study of Al-N simultaneous doping and thermal annealing influence on the properties of ZnO films is very important for achievement as p-type conductivity in the films as for improvement the performance of ZnO-based ultraviolet detectors. Highly-doped ZnO: Al, N films containing the Zn3N2 phase (ZnO: Al, N-Zn3N2) were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Our work presents a comparative study of the structure, optical and electronic properties of highly-doped as-grown and annealed ZnO: Al, N films. It was shown that the thermal annealing of ZnO: Al, N-Zn3N2 film at atmospheric conditions allows to decompose the Zn3N2 phase. The features of this phenomena on the properties of ZnO: Al, N films were investigated and discussed in detail by using X-ray diffraction, energy dispersive X-ray analysis, Raman scattering, photoluminescence, X-ray photoelectron spectroscopy and X-ray emission spectroscopy.
引用
收藏
页码：605 / 612
页数：8
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