Current-voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

被引：43

作者：

Kocyigit, A. ^{[1
]}

Orak, I. ^{[2
,3
]}

Caldiran, Z. ^{[4
]}

Turut, A. ^{[5
]}

机构：

[1] Igdir Univ, Fac Engn, Dept Elect Elect Engn, Igdir, Turkey

[2] Bingol Univ, Vocat Sch Hlth Serv, TR-12000 Bingol, Turkey

[3] Bingol Univ, Fac Sci & Arts, Dept Phys, TR-12000 Bingol, Turkey

[4] Ataturk Univ, Dept Phys, Fac Sci, TR-25100 Erzurum, Turkey

[5] Istanbul Medeniyet Univ, Fac Engn & Nat Sci, Dept Engn Phys, TR-34700 Istanbul, Turkey

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 22期

关键词：

DEPENDENT CURRENT-VOLTAGE; SCHOTTKY-BARRIER DIODES; ATOMIC LAYER DEPOSITION; STATE ENERGY-DISTRIBUTIONS; SPRAY-PYROLYSIS TECHNIQUE; CAPACITANCE-VOLTAGE; ELECTRICAL-PROPERTIES; SERIES RESISTANCE; FILMS; CONTACTS;

D O I：

10.1007/s10854-017-7646-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au/ZnO/n-Si device was obtained by using atomic layer deposition (ALD) technique, and it was characterized by I-V measurement in a wide temperature from 100 to 380 K with 20 K steps. XRD measurements were performed on ZnO thin film layer, and (002) and (201) peaks were seen in XRD pattern of the film. Surface morphology and cross section of the device were taken by SEM and discussed in the details. Some device parameters such as barrier height, ideality factor, series resistance were calculated by thermionic emission theory (TE), using Cheung's and Norde's functions. The Calculation results revealed that all device parameters strongly depended on temperature changing. In addition, interface states (N (ss) ) graphs were plotted and discussed according to energy levels and measurement temperatures. It can be concluded that this device can be used in various technological applications in wide range temperatures in industry.

引用

页码：17177 / 17184

页数：8

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