Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

被引：30
作者：
Murugapandiyan, P. [1 ]
Ravimaran, S. [2 ]
William, J. [3 ]
Sundaram, K. Meenakshi [4 ]
机构：
[1] Agnel Inst Technol & Design, Dept Elect & Commun Engn, Goa, India
[2] MAM Coll Engn, Dept Elect & Comp Sci Engn, Tiruchirappalli, Tamil Nadu, India
[3] MAM Coll Engn & Technol, Dept Elect & Commun Engn, Tiruchirappalli, Tamil Nadu, India
[4] Botho Univ, Fac Grad Studies & Res, Gaborone, Botswana
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 111卷
关键词：
HEMT; Back-barrier; Breakdown voltage; JEoM; Cut-off frequency; ELECTRON-MOBILITY TRANSISTORS; INALN/ALN/GAN HEMTS; INAIN/GAN; DC;
D O I：
10.1016/j.spmi.2017.08.002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAIN/AIN/GaN HEMT with AIGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E mode) HEMT exhibited a peak drain current density I-dmax of 2.3 (2.42) A/mm, trans conductance gm of 1.24(1.65) S/mm, current gain cut-off frequency f(t) of 262 (246) GHz, power gain cut-off frequency f(max) of 246(290) GHz and the three terminal off-state breakdown voltage V-BR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1050 / 1057
页数：8
相关论文
共 31 条
[11]   InAIN/GaN HEMTs:: A first insight into technological optimization [J].
Kuzmík, J ;
Kostopoulos, A ;
Konstantinidis, G ;
Carlin, JF ;
Georgakilas, A ;
Pogany, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :422-426
[12]   3000-V 4.3-Ω . cm2 InAlN/GaN MOSHEMTs With AlGaN Back Barrier [J].
Lee, Hyung-Seok ;
Piedra, Daniel ;
Sun, Min ;
Gao, Xiang ;
Guo, Shiping ;
Palacios, Tomas .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) :982-984
[13]   Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si [J].
Liu, Z. H. ;
Arulkumaran, S. ;
Ng, G. I. .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (06) :383-385
[14]   Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors [J].
Lugani, Lorenzo ;
Carlin, Jean-Francois ;
Py, Marcel A. ;
Martin, Denis ;
Rossi, Francesca ;
Salviati, Giancarlo ;
Herfurth, Patrick ;
Kohn, Erhard ;
Blaesing, Juergen ;
Krost, Alois ;
Grandjean, Nicolas .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (21)
[15]   High-fmax GaNHEMT with high breakdown voltage over 100 V for millimeter-wave applications [J].
Makiyama, Kozo ;
Ohki, Toshihiro ;
Kanamura, Masahito ;
Imanishi, Kenji ;
Hara, Naoki ;
Kikkawa, Toshihide .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2054-2058
[16]   94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts [J].
Marti, Diego ;
Tirelli, Stefano ;
Teppati, Valeria ;
Lugani, Lorenzo ;
Carlin, Jean-Francois ;
Malinverni, Marco ;
Grandjean, Nicolas ;
Bolognesi, C. R. .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (01) :17-19
[17]  
Medjdoub F, 2006, INT EL DEVICES MEET, P673
[18]  
Mishra Umesh K., 2008, IEEE 96 P IEEE 2 FEB
[19]   DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications [J].
Murugapandiyan, P. ;
Ravimaran, S. ;
William, J. ;
Ajayan, J. ;
Nirmal, D. .
SUPERLATTICES AND MICROSTRUCTURES, 2017, 109 :725-734
[20]   DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications [J].
Murugapandiyan, P. ;
Ravimaran, S. ;
William, J. .
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2017, 77 :163-168
1234