CMOS devices and beyond - A process integration perspective

被引：0
作者：
Hutchby, JA [1 ]
Zhirnov, V [1 ]
Cavin, R [1 ]
Bourianoff, G [1 ]
机构：
[1] Semicond Res Corp, Res Triangle Pk, NC 27709 USA
来源：
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 2003年 / 683卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Development of CMOS technology is approaching severe technological limits in the next 10 - 15 years. Overcoming these limits will demand introduction of new manufacturable materials and device structures to extend the speed of silicon integrated circuits at the historical rate of 17% per year to the end of the 2001 International Technology Roadmap for Semiconductors (2016). Following a brief discussion of these limits, this paper will review the most promising approaches to new materials, device structures and issues related to their integration in advanced CMOS structures. The paper will conclude with some brief observations and issues regarding extension of CMOS-like FET structures via new nano-scale materials.
引用
收藏
页码：74 / 80
页数：7
相关论文
共 26 条
[1]  
CHAU R, 2002, REL TOP RES C SRC IN
[2]  
CHAU R, 2001, P IEDM, P621
[3]  
Choi YK, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P259, DOI 10.1109/IEDM.2002.1175827
[4]   Ultra-Thin Body PMOSFETs with selectively deposited Ge source/drain [J].
Choi, YK ;
Ha, D ;
King, TJ ;
Hu, CM .
2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :19-20
[5]  
Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872
[6]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[7]  
Doris B, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P267, DOI 10.1109/IEDM.2002.1175829
[8]  
Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI DOI 10.1109/IEDM.2001.979537
[9]  
Hoyt JL, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P23, DOI 10.1109/IEDM.2002.1175770
[10]  
HUTCHBY JA, 2002, NANOELECTRONICS CURR
123