Solving thermal issues in tensile-strained Ge microdisks

被引:5
作者
Elbaz, A. [1 ,2 ]
El Kurdi, M. [1 ]
Aassime, A. [1 ]
Sauvage, S. [1 ]
Checoury, X. [1 ]
Sagnes, I [1 ]
Boeuf, F. [2 ]
Boucaud, P. [1 ,3 ]
机构
[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol, Ave Vauve 91120, F-91120 Palaiseau, France
[2] STMicroelectronics, Rue Jean Monnet, F-38054 Crolles, France
[3] Univ Cole Azur, CRHEA CNRS, Rue Bernard Gregory, F-06560 Valbonne, France
关键词
ON-INSULATOR; GERMANIUM; SILICON;
D O I
10.1364/OE.26.028376
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We propose to use Ge-dielectric-metal stacking to allow one to address both thermal management with the metal as an efficient heat sink and tensile strain engineering with the buried dielectric as a stressor layer. This scheme is particularly useful for the development of Ge-based optical sources. We demonstrate experimentally the relevance of this approach by comparing the optical response of tensile-strained Ge microdisks with an Al heat sink or an oxide pedestal. Photoluminescence indicates a much reduced temperature rise in the microdisk (16 K with Al pedestal against 200 K with SiO2 pedestal under a 9 mW continuous wave optical pumping). An excellent agreement is found with finite element modeling of the temperature rise. This original stacking combining metal and dielectrics is promising for integrated photonics where thermal management is an issue. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:28376 / 28384
页数:9
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