Si1-yCy and Si1-x-yGexCy alloy layers

被引：0
作者：
Eberl, K [1 ]
Brunner, K [1 ]
Schmidt, OG [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, Stuttgart, Germany
来源：
GERMANIUM SILICON: PHYSICS AND MATERIALS | 1999年 / 56卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：387 / 422
页数：36
相关论文
共 111 条
[1]   Growth and characterization of self-assembled Ge-rich islands on Si [J].
Abstreiter, G ;
Schittenhelm, P ;
Engel, C ;
Silveira, E ;
Zrenner, A ;
Meertens, D ;
Jager, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1521-1528
[2]  
AMOUR S, 1997, THIN SOLID FILMS, V294, P112
[3]   PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].
APETZ, R ;
VESCAN, L ;
HARTMANN, A ;
DIEKER, C ;
LUTH, H .
APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447
[4]   CHEMICAL-VAPOR-DEPOSITION OF HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES [J].
ATZMON, Z ;
BAIR, AE ;
JAQUEZ, EJ ;
MAYER, JW ;
CHANDRASEKHAR, D ;
SMITH, DJ ;
HERVIG, RL ;
ROBINSON, M .
APPLIED PHYSICS LETTERS, 1994, 65 (20) :2559-2561
[5]   Cobalt and titanium metallization of SiGeC for shallow contacts [J].
Bair, AE ;
Alford, TL ;
Atzmon, Z ;
Marcus, SD ;
Doller, DC ;
Morton, R ;
Lau, SS ;
Mayer, JW .
ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 :529-533
[6]  
Boher P, 1997, MATER RES SOC SYMP P, V452, P959
[7]   BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS [J].
BOUCAUD, P ;
FRANCIS, C ;
JULIEN, FH ;
LOURTIOZ, JM ;
BOUCHIER, D ;
BODNAR, S ;
LAMBERT, B ;
REGOLINI, JL .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :875-877
[8]   PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE [J].
BOUCAUD, P ;
FRANCIS, C ;
LARRE, A ;
JULIEN, FH ;
LOURTIOZ, JM ;
BOUCHIER, D ;
BODNAR, S ;
REGOLINI, JL .
APPLIED PHYSICS LETTERS, 1995, 66 (01) :70-72
[9]   Intersubband absorption in Si/Si1-x-yGexCy quantum wells [J].
Boucaud, P ;
Lourtioz, JM ;
Julien, FH ;
Warren, P ;
Dutoit, M .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1734-1736
[10]   Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene [J].
Boulmer, J ;
Guedj, C ;
Debarre, D .
THIN SOLID FILMS, 1997, 294 (1-2) :137-140
12345678910