Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers

被引:12
作者
Wang, Y. Y. [1 ]
Huang, S. M. [1 ]
Yu, K. [2 ]
Jiang, J. [2 ,3 ]
Liang, Y. [4 ]
Zhong, B. [5 ]
Zhang, H. [2 ]
Kan, G. F. [2 ]
Quan, S. F. [1 ]
Yu, J. [1 ]
机构
[1] Harbin Inst Technol Weihai, Dept Optoelect Sci, Weihai 264209, Peoples R China
[2] Harbin Inst Technol Weihai, Sch Marine Sci & Technol, Weihai 264209, Peoples R China
[3] Harbin Inst Technol, State Key Lab Urban Water Resource & Environm, Harbin 150001, Peoples R China
[4] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
[5] Harbin Inst Technol Weihai, Sch Mat Sci & Engn, Weihai 264209, Peoples R China
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; OXIDE; PERFORMANCE; DIELECTRICS; DEPOSITION; STABILITY; MOS2;
D O I
10.1063/5.0003230
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, homogeneous surface oxidation of hafnium disulfide (HfS2) is achieved by an extremely simple thermal treatment, i.e., mild oxidization in air. Due to the high thermal stability of hafnium dioxide (HfO2), atomically flat HfO2 is formed on top of unoxidized HfS2 and unlimited layer-by-layer oxidation is observed. The thickness of HfO2 can be controlled by oxidation temperature and time. The HfO2 layer fabricated by the oxidation of HfS2 is smooth and atomically flat with roughness comparable to that of pristine HfS2. Growth of a high-quality, uniform, atomically flat oxide film on top of semiconductor is the first step for the fabrication of field effect transistors and metal-insulator-semiconductor devices. Thus, our results will facilitate the future fabrication of HfO2 films with atomic-scale thickness.
引用
收藏
页数:6
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