Growth and characterization of indium antimonide and gallium antimonide crystals

被引：42
|
作者：
Udayashankar, NK [1 ]
Bhat, HL
机构：
[1] Karnataka Reg Engn Coll, Dept Phys, Srinivasnagar 574157, Karnataka, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2001年 / 24卷 / 05期
关键词：
synthesis; crystallization; chemical etching; defect density; Hall measurements; photoluminescence (PL) spectra;
D O I：
10.1007/BF02706714
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.
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页码：445 / 453
页数：9
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