Growth and characterization of indium antimonide and gallium antimonide crystals

被引：42
|
作者：
Udayashankar, NK [1 ]
Bhat, HL
机构：
[1] Karnataka Reg Engn Coll, Dept Phys, Srinivasnagar 574157, Karnataka, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2001年 / 24卷 / 05期
关键词：
synthesis; crystallization; chemical etching; defect density; Hall measurements; photoluminescence (PL) spectra;
D O I：
10.1007/BF02706714
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.
引用
收藏
页码：445 / 453
页数：9
相关论文
共 50 条
  • [21] THERMOMAGNETIC EFFECTS IN N-TYPE GALLIUM ANTIMONIDE AND ITS ALLOYS WITH INDIUM ANTIMONIDE
    IVANOVOMSKII, VI
    KOLOMIETS, BT
    SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2581 - 2582
  • [22] Chemical interaction of indium arsenide and gallium antimonide with sulfur
    Kompanichenko, NM
    Omel'chuk, AA
    Kozin, VF
    INORGANIC MATERIALS, 2003, 39 (03) : 215 - 219
  • [23] Chemical Interaction of Indium Arsenide and Gallium Antimonide with Sulfur
    N. M. Kompanichenko
    A. A. Omel'chuk
    V. F. Kozin
    Inorganic Materials, 2003, 39 : 215 - 219
  • [24] EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE
    ARIZUMI, T
    KAKEHI, M
    SHIMOKAWA, R
    JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 151 - +
  • [25] ETCHING OF GALLIUM ARSENIDE AND INDIUM ANTIMONIDE BY IODINE VAPOR
    MARONCHU.IE
    KHAINOVS.VV
    EDELMAN, FL
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 10 (04): : 477 - &
  • [26] EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE
    KAKEHI, M
    SHIMOKAWA, R
    ARIZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1039 - +
  • [27] OSCILLATORY MAGNETOABSORPTION AND EXCITONS IN GALLIUM ANTIMONIDE CRYSTALS
    VARFOLOMEEV, AV
    RYSKIN, AY
    SEISYAN, RP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1234 - 1239
  • [28] The growth of ternary substrates of indium gallium antimonide by the double crucible Czochialski technique
    Ashley, T
    Beswick, JA
    Cockayne, B
    Elliott, CT
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 209 - 213
  • [29] GROWTH DEFECTS IN INDIUM ANTIMONIDE MONOCRYSTALS
    OLKHOVIK.TI
    SHULPINA, IL
    IVLEVA, VS
    SELYANINA, VI
    FOMIN, VG
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1971, 35 (03): : 490 - +
  • [30] Anisotropic growth of indium antimonide nanostructures
    Zhou, J. F.
    Chen, Z.
    He, L. B.
    Xu, C. H.
    Yang, L.
    Han, M.
    Wang, G. H.
    EUROPEAN PHYSICAL JOURNAL D, 2007, 43 (1-3): : 283 - 286
12345