Diffusion capacitance and laser diodes

被引：9

作者：

Strologas, J

Hess, K

机构：

[1] Physics Department, Univ. Illinois at Urbana-Champaign, Urbana

[2] Fermi Natl. Accelerator Laboratory, Batavia

[3] Physics Department, University of New Mexico, Albuquerque

[4] Electrical Engineering Department, Beckman Institute, University of Illinois, Urbana-Champaign

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期

关键词：

carrier lifetime; depletion capacitance; diffusion capacitance; diode length; laser diode; modulation response;

D O I：

10.1109/TED.2003.822345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.

引用

页码：506 / 509

页数：4

共 6 条

[1] Bhattacharya P., 1994, SEMICONDUCTOR OPTOEL
[2] Hess K., 2000, Advanced Theory of Semiconductor Devices
[3] *INT SYST ENG INC, PROGR MDRAW DESSIS T
[4] Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
Laux, SE
Hess, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (02) : 396 - 412
[5] Simulating the modulation response of VCSELs: the effects of diffusion capacitance and spatial hole-burning
Liu, Y
Ng, WC
Oyafuso, F
Klein, B
Hess, K
[J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2002, 149 (04): : 182 - 188
[6] STROLOGAS J, 2002, THESIS U ILLINOIS UR, P94026

← 1 →