Gas Sensing Properties of In2O3 Nano-Films Obtained by Low Temperature Pulsed Electron Deposition Technique on Alumina Substrates

被引：8
作者：
Addabbo, Tommaso [1 ]
Bruzzi, Mara [2 ]
Fort, Ada [1 ]
Mugnaini, Marco [1 ]
Vignoli, Valerio [1 ]
机构：
[1] Univ Siena, Dept Informat Engn & Math Sci, Via Roma 56, I-53100 Siena, Italy
[2] Univ Firenze, Dept Phys & Astron, Via G Sansone 1, I-50019 Sesto Fiorentino, FI, Italy
来源：
SENSORS | 2018年 / 18卷 / 12期
关键词：
metal oxide gas sensors; nano-structured device; pulsed electron deposition technique; sensor modeling; SENSORS; KINETICS; SURFACE; NOX;
D O I：
10.3390/s18124410
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
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页数：17
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