Reliability Impact of N-Modular Redundancy in QCA

被引：18

作者：

Dysart, Timothy J. ^{[1
]}

Kogge, Peter M. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2011年 / 10卷 / 05期

基金：

美国国家科学基金会;

关键词：

Circuit reliability; nanoelectronics; probabilistic transfer matrices (PTMs); quantum-dot cellular automata (QCA); triple modular redundancy (TMR); LOGIC GATE; ARCHITECTURE; CIRCUITS;

D O I：

10.1109/TNANO.2010.2099131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoelectronic systems are extremely likely to demonstrate high defect and fault rates. As a result, defect and/or fault tolerance may be necessary at several levels throughout the system. Methods for improving defect tolerance, in order to prevent faults, at the component level for quantum-dot cellular automata (QCA)(1) have been studied. However, methods and results considering fault tolerance in QCA have received less attention. In this paper, we present an analysis of how QCA system reliability may be impacted by using various N-modular redundancy (NMR) schemes. Our results demonstrate that using NMR in QCA can improve reliability in some cases, but can harm reliability in others.

引用

页码：1015 / 1022

页数：8

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