Soft error rate increase for new generations of SRAMs

被引：56
作者：
Granlund, T
Granbom, B
Olsson, N
机构：
[1] Saab Avion AB, Div Electromagnet Technol, Linkoping, Sweden
[2] Swedish Def Res Agcy, Syst Technol Div, S-17290 Sundbyberg, Sweden
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
aircraft electronics; CMOS memory integrated circuits; neutron radiation effects; radiation effects; semiconductor device testing; semiconductor device radiation effects; SRAM chips;
D O I：
10.1109/TNS.2003.821593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on enhanced susceptibility for neutron-induced soft errors from accelerated. testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
引用
收藏
页码：2065 / 2068
页数：4
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