Soft error rate increase for new generations of SRAMs

被引：56
作者：
Granlund, T
Granbom, B
Olsson, N
机构：
[1] Saab Avion AB, Div Electromagnet Technol, Linkoping, Sweden
[2] Swedish Def Res Agcy, Syst Technol Div, S-17290 Sundbyberg, Sweden
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
aircraft electronics; CMOS memory integrated circuits; neutron radiation effects; radiation effects; semiconductor device testing; semiconductor device radiation effects; SRAM chips;
D O I：
10.1109/TNS.2003.821593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on enhanced susceptibility for neutron-induced soft errors from accelerated. testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
引用
收藏
页码：2065 / 2068
页数：4
相关论文
共 23 条
  • [1] AKKERMAN A, 2002, IEEE T NUCL SCI, V49
  • [2] SATELLITE ANOMALIES FROM GALACTIC COSMIC-RAYS
    BINDER, D
    SMITH, EC
    HOLMAN, AB
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2675 - 2680
  • [3] FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS
    BRADY, FT
    SCOTT, T
    BROWN, R
    DAMATO, J
    HADDAD, NF
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 2304 - 2309
  • [4] Cohen N., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P315, DOI 10.1109/IEDM.1999.824159
  • [5] Dodd PE, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P333, DOI 10.1109/IEDM.2002.1175846
  • [6] Impact of substrate thickness on single-event effects in integrated circuits
    Dodd, PE
    Shaneyfelt, MR
    Fuller, E
    Pickel, JC
    Sexton, FW
    Winokur, PS
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 1865 - 1871
  • [7] Comparison of the sensitivity to heavy ions of 0.25-μm bulk and SOI technologies
    Gasiot, G
    Ferlet-Cavrois, V
    Roche, P
    Flatresse, P
    D'Hose, C
    Musseau, O
    de Poncharra, JD
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) : 1450 - 1455
  • [8] Cosmic-ray soft error rate characterization of a standard 0.6-μm CMOS process
    Hazucha, P
    Svensson, C
    Wender, SA
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (10) : 1422 - 1429
  • [9] Impact of CMOS technology scaling on the atmospheric neutron soft error rate
    Hazucha, P
    Svensson, C
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2586 - 2594
  • [10] Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs
    Hubert, G
    Palau, JM
    Castellani-Coulié, K
    Calvet, MC
    Fourtine, S
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 1953 - 1959
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