Investigation Of Stress Generated By Interconnection Processes With Micro-Raman Spectroscopy (μRS)

被引：1

作者：

Liu, E. ^{[1
]}

Bhogaraju, Sri Krishna ^{[1
]}

Lux, Kerstin ^{[1
]}

Elger, Gordon ^{[1
]}

Mou, Rokeya Mumtahana ^{[2
]}

机构：

[1] TH Ingolstadt, Inst Innovat Mobil IIMo, D-85049 Ingolstadt, Germany

[2] Fraunhofer Inst Transportat & Infrastruct Syst IV, Dresden, Germany

来源：

IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022) | 2022年

关键词：

component; mu-Raman Spectroscopy; Au80Sn20; Cu sintering; finite element simultion; SILICON; CRYSTALS; DEVICES;

D O I：

10.1109/ECTC51906.2022.00123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stress and strain induced by interconnection processes in Raman active semiconductor materials, e.g. silicon, are investigated using Micro-Raman Spectroscopy (mu RS). Sintered interconnects are benchmarked against standard eutectic Au80Sn20 solder used for optoelectronic devices packaging. The Raman signal is measured and analyzed before and after the bonding process. Scanning acoustic microscopy (SAM) and cross-sectioning of the assemblies is performed to correlate the measured measured stress with interconnection quality. Based on the results a finite element (FE) model is evaluated and calibrated for analysis of stress in interconnections.

引用

页码：739 / 745

页数：7

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