Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

被引：8

作者：

Cao, Jingchen ^{[1
]}

Wang, Peng Fei ^{[1
]}

Li, Xun ^{[1
]}

Guo, Zixiang ^{[1
]}

Zhang, En Xia ^{[1
]}

Reed, Robert A. ^{[1
]}

Alles, Michael L. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Arreghini, Antonio ^{[2
]}

Rosmeulen, Maarten ^{[2
]}

Bastos, Joao P. ^{[2
]}

Van den Bosch, Geert ^{[2
]}

Linten, Dimitri ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, 221 Kirkland Hall, Nashville, TN 37235 USA

[2] IMEC, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2022年 / 69卷 / 03期

关键词：

Annealing; Programming; Tunneling; Electron traps; Threshold voltage; Silicon compounds; SONOS devices; 3-D nand; silicon oxynitride (SiON) tunneling layer; threshold voltage; total dose effects; RADIATION RESPONSE; BORDER TRAPS; OXIDE; INTERFACE; RETENTION; TRANSPORT; BUILDUP; IMPACT;

D O I：

10.1109/TNS.2021.3133407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-ionizing-dose effects are evaluated in vertical-charge-trapping NAND devices with silicon oxynitride (SiON) and SiO2 tunneling layers. Processing splits include SiON tunneling layers with and without H-2/D-2 high-pressure annealing. Programmed devices were irradiated to 500 krad(SiO2) with 10-keV X-rays and annealed for 30 min. Second programming after annealing does not fully restore the original, programmed state. Radiation-induced trapped holes compensate for deeply trapped electrons that are injected into the dielectric during device programming. Throughout the full irradiation and annealing sequence, threshold voltages remain large enough to enable successful nonvolatile (NV) memory application.

引用

页码：314 / 320

页数：7

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