Measurements of gain spectra over wide spectral ranges in GaInAsP/InP multiple-quantum-well laser diodes

被引：3
|
作者：
Inada, Satoshi [1 ,2 ]
Kinoshita, Moto
Yoshita, Masahiro
Akiyama, Hidefumi
Zhang, Liming [3 ]
机构：
[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[2] JST, CREST, Chiba 2778581, Japan
[3] Bell Labs, Holmdel, NJ 07733 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 01期
关键词：
quantum wells; semiconductor laser; Fabry-Perot laser; GaInAsP/InP; gain spectrum; internal loss; transparency current;
D O I：
10.1143/JJAP.47.329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Gain spectra of 1500-nm-wavelength GaInAsP/InP multiple-quantum-well (MQW) laser diodes were obtained over wide wavelength and injection current ranges. To cover wide spectral ranges, we combined gain spectra derived from amplified spontaneous emission (ASE) spectra and white-light transmittance spectra. In addition, gain (absorption) spectra for very low injection currents were obtained through ASE measurements using a liquid-nitrogen-cooled InGaAs photodiode array detector with high sensitivity. From these gain spectra, accurate estimations of the material gain and carrier-density-dependent internal loss as well as the material-transparency current were obtained.
引用
收藏
页码：329 / 333
页数：5
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