The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N2/Ar/hexamethyldisilazane microwave plasma

被引：34

作者：

Bulou, Simon ^{[1
]}

Le Brizoual, Laurent ^{[2
]}

Miska, Patrice ^{[1
]}

de Poucques, Ludovic ^{[1
]}

Hugon, Robert ^{[1
]}

Belmahi, Mohammed ^{[1
]}

Bougdira, Jamal ^{[1
]}

机构：

[1] Fac Sci & Technol, Dept Chim & Phys Solides & Surfaces, CNRS, IJL,UMR 7198, F-54506 Vandoeuvre Les Nancy, France

[2] CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, F-44322 Nantes, France

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 01期

关键词：

Microwave plasma-assisted chemical vapor deposition; Silicon carbonitride; Hexamethyldisilazane; Optical properties; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; CHEMICAL-VAPOR-DEPOSITION; SILICON CARBONITRIDE FILMS; AMORPHOUS-SILICON; SUBSTRATE-TEMPERATURE; OXYNITRIDE FILMS; INDUCED CVD; H FILMS; NITRIDE; PECVD; HEXAMETHYLDISILAZANE;

D O I：

10.1016/j.tsf.2011.07.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon carbonitride (a-SiCN) thin films were synthesized in a microwave plasma assisted chemical vapor deposition system using N-2, Ar, CH4 and hexamethyldisilazane vapor (HMDSN). Composition, morphology and optical constants of the layers have been studied as a function of CH4 rate in the range 0 to 9%. It was found that films are mainly composed of silicon nitride like compound whatever the CH4 rate. However, CH4 addition leads to less hydrogenated and denser films. In addition, a refractive index augmentation from 1.7 to 2.0 and a Tauc gap decrease from 5.2 eV to 4.8 eV is measured with CH4 rate increase. It is believed that the refractive index augmentation is due to higher thin film density whereas hydrogen bonds decrease is assumed to contribute to the band gap narrowing. Besides. CH4 addition to the gaseous mixture increases thin film oxidation resistance. These results show the ability of varying composition, structure and optical constants of a-SiCN films by modifying CH4 rate in a N-2/Ar/HMDSN plasma. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：245 / 250

页数：6

共 53 条

[11] Properties of Si-C-N films prepared on Si substrate using cobalt interfacial layers [J].

Chang, HL ;

Kuo, CT .

MATERIALS CHEMISTRY AND PHYSICS, 2001, 72 (02) :236-239

[12] The contact characteristics of SiCN films for opto-electrical devices applications [J].

Chang, WR ;

Fang, YK ;

Ting, SF ;

Chen, SF ;

Lin, CY ;

Hwang, SB ;

Chang, CN .

JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (03) :181-184

[13] Polymerized hexamethyldisilazane coated on equiatomic TiNi shape memory alloy using DC-pulsed plasma assisted chemical vapor deposition [J].

Chen, Chien-Hui ;

Yang, Mu-Rong ;

Wu, Shyi-Kaan .

SURFACE & COATINGS TECHNOLOGY, 2008, 202 (12) :2709-2714

[14] The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film [J].

Chen, CW ;

Huang, CC ;

Lin, YY ;

Chen, LC ;

Chen, KH .

[15] Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection [J].

Chen, CW ;

Huang, CC ;

Lin, YY ;

Chen, LC ;

Chen, KH ;

Su, WF .

[16] Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films - art. no. 073515 [J].

Chen, CW ;

Huang, CC ;

Lin, YY ;

Su, WF ;

Chen, LC ;

Chen, KH .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[17] Crystalline SiCN: a hard material rivals to cubic BN [J].

Chen, LC ;

Chen, KH ;

Wei, SL ;

Kichambare, PD ;

Wu, JJ ;

Lu, TR ;

Kuo, CT .

THIN SOLID FILMS, 1999, 355 :112-116

[18] Crystalline silicon carbon nitride: A wide band gap semiconductor [J].

Chen, LC ;

Chen, CK ;

Wei, SL ;

Bhusari, DM ;

Chen, KH ;

Chen, YF ;

Jong, YC ;

Huang, YS .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2463-2465

[19] A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications [J].

Chou, Tse-Heng ;

Fang, Yean-Kuen ;

Chiang, Yen-Ting ;

Lin, Cheng-I ;

Yang, Che-Yun .

SENSORS AND ACTUATORS A-PHYSICAL, 2008, 147 (01) :60-63

[20] Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H [J].

Dekkers, H. F. W. ;

Srinivasan, Nagendra Babu ;

Pourtois, G. .

APPLIED PHYSICS LETTERS, 2010, 96 (01)

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