The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N2/Ar/hexamethyldisilazane microwave plasma

被引：34

作者：

Bulou, Simon ^{[1
]}

Le Brizoual, Laurent ^{[2
]}

Miska, Patrice ^{[1
]}

de Poucques, Ludovic ^{[1
]}

Hugon, Robert ^{[1
]}

Belmahi, Mohammed ^{[1
]}

Bougdira, Jamal ^{[1
]}

机构：

[1] Fac Sci & Technol, Dept Chim & Phys Solides & Surfaces, CNRS, IJL,UMR 7198, F-54506 Vandoeuvre Les Nancy, France

[2] CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, F-44322 Nantes, France

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 01期

关键词：

Microwave plasma-assisted chemical vapor deposition; Silicon carbonitride; Hexamethyldisilazane; Optical properties; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; CHEMICAL-VAPOR-DEPOSITION; SILICON CARBONITRIDE FILMS; AMORPHOUS-SILICON; SUBSTRATE-TEMPERATURE; OXYNITRIDE FILMS; INDUCED CVD; H FILMS; NITRIDE; PECVD; HEXAMETHYLDISILAZANE;

D O I：

10.1016/j.tsf.2011.07.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon carbonitride (a-SiCN) thin films were synthesized in a microwave plasma assisted chemical vapor deposition system using N-2, Ar, CH4 and hexamethyldisilazane vapor (HMDSN). Composition, morphology and optical constants of the layers have been studied as a function of CH4 rate in the range 0 to 9%. It was found that films are mainly composed of silicon nitride like compound whatever the CH4 rate. However, CH4 addition leads to less hydrogenated and denser films. In addition, a refractive index augmentation from 1.7 to 2.0 and a Tauc gap decrease from 5.2 eV to 4.8 eV is measured with CH4 rate increase. It is believed that the refractive index augmentation is due to higher thin film density whereas hydrogen bonds decrease is assumed to contribute to the band gap narrowing. Besides. CH4 addition to the gaseous mixture increases thin film oxidation resistance. These results show the ability of varying composition, structure and optical constants of a-SiCN films by modifying CH4 rate in a N-2/Ar/HMDSN plasma. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：245 / 250

页数：6

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