Optimizing the Performance of a Solar Cell Based on New Materials

被引：0

作者：

Aissat, Abdelkader ^{[1
]}

Benahmed, A. Moumene ^{[1
]}

Bestam, Rachid ^{[1
]}

Vilcot, Jean Pierre ^{[2
]}

机构：

[1] Univ Saad Dahlab, LATSI Lab, Fac Technol, BP270, Blida 09000, Algeria

[2] Univ Sci & Technol Lille 1, IEMN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

2014 INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC) | 2014年

关键词：

Semiconductor III-V; New Materials; GaAsNBi; solar cell; photovoltaics;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is 0.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to 0.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = 10) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.

引用

页码：181 / 184

页数：4

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