Vapor Deposition of Copper-Manganese Interconnects

被引：0

作者：

Gordon, Roy G. ^{[1
]}

Feng, Jun ^{[1
]}

Li, Kecheng ^{[2
]}

Gong, Xian ^{[2
]}

机构：

[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[2] Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

2016 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC) | 2016年

关键词：

interconnects; through silicon vias; chemical vapor deposition; copper; manganese; diffusion barrier; void-free filling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.

引用

页码：177 / 179

页数：3

共 4 条

[1] Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs) [J].

Au, Yeung ;

Wang, Qing Min ;

Li, Huazhi ;

Lehn, Jean-Sebastien M. ;

Shenai, Deo V. ;

Gordon, Roy G. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (06) :D382-D385

[2] Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers [J].

Au, Yeung ;

Lin, Youbo ;

Gordon, Roy G. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :D248-D253

[3] Rapid vapor deposition of highly conformal silica nanolaminates [J].

Hausmann, D ;

Becker, J ;

Wang, SL ;

Gordon, RG .

SCIENCE, 2002, 298 (5592) :402-406

[4]

Siew Y. K., P IEEE IITC 2013, P1

← 1 →