GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters

被引：9
作者：
Rossella, Francesco [1 ,2 ]
Piazza, Vincenzo [3 ]
Rocci, Mirko [1 ,2 ]
Ercolani, Daniele [1 ,2 ]
Sorba, Lucia [1 ,2 ]
Beltram, Fabio [1 ,2 ]
Roddaro, Stefano [1 ,2 ]
机构：
[1] CNR, Scuola Normale Super, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[2] CNR, Ist Nanosci, Piazza San Silvestro 12, I-56127 Pisa, Italy
[3] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
来源：
NANO LETTERS | 2016年 / 16卷 / 09期
关键词：
Subwavelength emitters; electroluminescence; GHz modulation; Schottky barrier; optoelectronics; semiconductor nanowires; NANOWIRE HETEROSTRUCTURES; SEMICONDUCTOR NANOWIRES; AVALANCHE BREAKDOWN; OPTICAL MICROSCOPY; INFRARED-EMISSION; LIGHT; PHOTONICS; JUNCTIONS; SILICON; TRANSISTORS;
D O I：
10.1021/acs.nanolett.6b02020
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigate light emission from nanoscale point-sources obtained in hybrid metal-GaAs nanowires embedding two sharp axial Schottky barriers. Devices are obtained via the formation of Ni-rich metallic alloy regions in the nanostructure body thanks to a technique of controlled thermal annealing of Ni/Au electrodes. In agreement with recent findings, visible-light electroluminescence can be observed upon suitable voltage biasing of the junctions. We investigate the time-resolved emission properties of our devices and demonstrate an electrical modulation of light generation up to 1 GHz. We explore different drive configurations and discuss the intrinsic bottlenecks of the present device architecture. Our results demonstrate a novel technique for the realization of fast subwavelength light sources with possible applications in sensing and microscopy beyond the diffraction limit.
引用
收藏
页码：5521 / 5527
页数：7
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