Controlled Ohmic and nonlinear electrical transport in inkjet-printed single-wall carbon nanotube films

被引：37

作者：

Mustonen, Tero ^{[1
,2
]}

Maklin, Jani ^{[1
,2
]}

Kordas, Krisztian ^{[1
,2
]}

Halonen, Niina ^{[1
,2
]}

Toth, Geza ^{[1
,2
]}

Saukko, Sami ^{[1
,2
]}

Vahakangas, Jouko ^{[1
,2
]}

Jantunen, Heli ^{[1
,2
]}

Kar, Swastik ^{[3
]}

Ajayan, Pulickel M. ^{[3
,4
]}

Vajtai, Robert ^{[5
]}

Helisto, Panu

Seppa, Heikki ^{[6
]}

Moilanen, Hannu ^{[7
]}

机构：

[1] Univ Oulu, Microelect & Mat Phys Labs, Dept Elect & Informat Engn, FIN-91004 Oulu, Finland

[2] Univ Oulu, EMPART Res Grp Infotech Oulu, FIN-91004 Oulu, Finland

[3] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[4] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77251 USA

[5] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA

[6] VIT Techn Res Ctr Finland, Quantron Microtechnol & Sensors, Espoo 02044, Finland

[7] LaserProbe LP Ltd, FIN-90800 Oulu, Finland

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.77.125430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the fabrication and characterization of logic elements (transistors and interconnects) built using our recently developed inkjet-printer-controlled deposition of single-wall carbon nanotube network films. The method requires no preselection of "metallic" or "semiconducting" nanotubes. By selecting the number of prints on a specified region, it is possible to have low-density, nonlinear, gate-voltage controllable transistors or high-density, linear, high-current-throughput metallic interconnects without any gate-voltage response. Intermediate steps drive the films between the nonlinear and linear regimes with precise controllability. The transport mechanism in these films as a function of bias, gate voltage, and temperature dependence have been investigated and analyzed using junction properties of metal-semiconductors in the context of networks of carbon nanotubes.

引用

页数：7

共 66 条

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