Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric

被引：3

作者：

Perevalov, T., V ^{[1
]}

Gismatulin, A. A. ^{[1
]}

Gritsenko, V. A. ^{[1
,2
]}

Xu, H. ^{[3
,4
]}

Zhang, J. ^{[4
]}

Vorotilov, K. A. ^{[5
]}

Baklanov, M. R. ^{[4
,5
]}

机构：

[1] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, 20 Marks Ave, Novosibirsk 630073, Russia

[3] China United Network Commun Co Ltd, 9 Iuomashi St, Beijing 100052, Peoples R China

[4] North China Univ Technol, 5 Jinyuanzhuang Rd, Beijing 100144, Peoples R China

[5] Russian Technol Univ, MIREA, 78 Vernadsky Ave, Moscow 119454, Russia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2022年 / 51卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

Low-k dielectric; charge transport; trap energy; photoluminescence; SILICON; CONDUCTION; DEFECTS;

D O I：

10.1007/s11664-021-09411-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the most important issues during the selection of low-k dielectrics is related to their intrinsic properties including their electric breakdown and leakage current that are predominantly determined by conduction mechanisms. This study is devoted to elucidating the charge transport mechanism in the SiOCH low-k dielectric films fabricated by plasma-enhanced chemical vapor deposition. By analyzing four bulk-limited models of the charge transport it was found that only the Nasyrov-Gritsenko model of phonon-assisted electron tunneling between neutral traps describes the experimental I-V-T characteristics with all the fitting parameters with reasonable physical values. The obtained thermal trap energy value 1.2 eV is confirmed independently by photoluminescence spectroscopy data analysis. The trap nature and comparison of the obtained results with the corresponding data for low-k films with similar chemical composition and deposited by the spin-on-glass technology using self-assembling chemistry is discussed. It is hypothesized that the defect with ionization energy of 1.2 eV is the oxygen divacancy.

引用

页码：2521 / 2527

页数：7

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