Cmos-mems probes for reconfigurable IC's

被引：0

作者：

Liu, J. ^{[1
]}

Noman, M. ^{[1
]}

Bain, J. A. ^{[1
]}

Schlesinger, T. E. ^{[1
]}

Fedder, G. K. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

来源：

MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on our progress on the development of CMOS-MEMS electrothermal conductive probes for Memory-Intensive Self-Configuring Integrated Circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure circuits by mechanically addressing and passing current through resistance change vias embedded within the chip circuitry. Cantilevered probes are designed with 1, 4, 9, 16 and 25 mu m(2) areas that are plated with nickel. The vertical range of the electrothermal actuator is 23.9 mu m with 3.7 mW heating power, but the range is reduced when in contact with a gold-coated glass slide due to thermal effects. Probe contact to gold varies from 10-50 Omega for multiple make and break cycles with 1 mu m(2) tips.

引用

页码：515 / 518

页数：4

共 8 条

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