Hydrogen decoration of vacancy related complexes in hydrogen implanted silicon

被引：5

作者：

Malmbekk, Helge ^{[1
]}

Vines, Lasse ^{[1
]}

Monakhov, Edouard V. ^{[1
]}

Svensson, Bengt G. ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV | 2011年 / 178-179卷

关键词：

Silicon; hydrogen; DLTS; MCTS; implantation; POINT-DEFECTS; RESONANCE; CENTERS;

D O I：

10.4028/www.scientific.net/SSP.178-179.192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at E-nu+0.27 eV and E-c-0.32 eV have been observed (E-nu, and E-c denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125 degrees C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at E-c - 0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

引用

页码：192 / 197

页数：6

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