Study of the effect of the doped poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) polymeric anode on the organic light-emitting diode performances

被引：19

作者：

Del Mauro, Anna De Girolamo ^{[1
]}

Nenna, Giuseppe ^{[1
]}

Villani, Fulvia ^{[1
]}

Minarini, Carla ^{[1
]}

机构：

[1] Italian Natl Agcy New Technol Energy & Environm E, UTTP Nanomat & Device Technol Sect, Portici Res Ctr, I-80055 Portici, NA, Italy

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 16期

关键词：

Polymeric anode; Organic light-emitting diode; Highly conductive polymer; INDIUM-TIN-OXIDE; HOLE-INJECTION LAYER; SERIES RESISTANCE; PLASMA TREATMENT; V METHODS; I-V; INTERFACE; DEVICES; SURFACE; CONDUCTIVITY;

D O I：

10.1016/j.tsf.2012.03.128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bottom-emitting organic diode devices with polymeric anode were fabricated and their performances were compared to devices with different anodes. The highly transparent (transmittance approximate to 90%) and conductive (700 S/cm) anode was poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) processed from aqueous solution and modified by addition of dimethyl sulfoxide (DMSO). The electro-optical characteristics of the DMSO-doped PEDOT:PSS based device and devices with architectures based on undoped PEDOT: PSS and/or indium tin oxide (ITO) were investigated and the effects of the different anodes were analyzed by means of electrical responses in static and dynamic regimes. The efficiency of the device with the proposed polymeric anode was comparable to that of ITO based device but reduced with respect to the device including PEDOT:PSS as hole-injection layer. These results were correlated to the film morphological properties and discussed in terms of interfacial state density modification. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5386 / 5391

页数：6

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