Debye temperature dependent lattice thermal conductivity of silicon

被引:3
作者
Awad, AH [1 ]
机构
[1] Univ Basrah, Coll Educ, Dept Phys, Basrah, Iraq
关键词
Debye temperature; lattice thermal conductivity; silicon;
D O I
10.1023/A:1010104710424
中图分类号
O414.1 [热力学];
学科分类号
摘要
The temperature dependence of the Debye temperature theta(D)(T) was applied to analyze the lattice thermal conductivity of Si between 2 and 300 K. The analysis of experimental data in terms of the Dubey model of the two modes of conduction has been carried out by combining the relaxation time for phonon-phonon scattering, point defect scattering and boundary scattering. The relative importance of the contribution of each mode was examined by estimating their percentage contribution to the phonon conductivity. Agreement between theory and experiment is achieved over the whole temperature range of study.
引用
收藏
页码:187 / 196
页数:10
相关论文
共 30 条
[11]   ANALYSIS OF LATTICE THERMAL-CONDUCTIVITY AND PHONON-PHONON SCATTERING RELAXATION RATE - APPLICATION TO GE [J].
DUBEY, KS .
JOURNAL OF THERMAL ANALYSIS, 1980, 19 (02) :263-288
[12]  
DUBEY KS, 1977, INDIAN J PURE AP PHY, V15, P455
[13]   LATTICE THERMAL-CONDUCTIVITY OF SI IN TEMPERATURE-RANGE (2-1400) DEGREES K [J].
DUBEY, KS ;
VERMA, GS .
PHYSICAL REVIEW B, 1973, 7 (06) :2879-2882
[14]   NEW APPROACH TO LATTICE THERMAL-CONDUCTIVITY - APPLICATION TO GE [J].
DUBEY, KS ;
MISHO, RH .
JOURNAL OF THERMAL ANALYSIS, 1977, 12 (02) :223-233
[15]   THE HEAT CAPACITY OF PURE SILICON AND GERMANIUM AND PROPERTIES OF THEIR VIBRATIONAL FREQUENCY SPECTRA [J].
FLUBACHER, P ;
LEADBETTER, AJ ;
MORRISON, JA .
PHILOSOPHICAL MAGAZINE, 1959, 4 (39) :273-292
[16]   THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].
FULKERSON, W ;
MOORE, JP ;
WILLIAMS, RK ;
GRAVES, RS ;
MCELROY, DL .
PHYSICAL REVIEW, 1968, 167 (03) :765-+
[17]   THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].
GLASSBRENNER, CJ ;
SLACK, GA .
PHYSICAL REVIEW, 1964, 134 (4A) :1058-+
[18]   TEMPERATURE DEPENDENCE OF 3-PHONON PROCESSES IN SOLIDS WITH APPLICATION TO SI GE GAAS AND INSB [J].
GUTHRIE, GL .
PHYSICAL REVIEW, 1966, 152 (02) :801-&
[19]  
GUTHRIE GL, 1971, PHYS REV B, V3, P3373
[20]   ROLE OF LOW-ENERGY PHONONS IN THERMAL CONDUCTION [J].
HERRING, C .
PHYSICAL REVIEW, 1954, 95 (04) :954-965