Hole mobility in Mg-doped p-type InN films

被引：58

作者：

Wang, Xinqiang ^{[1
]}

Che, Song-Bek

Ishitani, Yoshihiro

Yoshikawa, Akihiko

机构：

[1] Chiba Univ, JST, CREST, Grad Sch Elect & Elect Engn,Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

Capacitance measurement - Doping (additives) - Electric conductivity - Film growth - Hole concentration - Hole mobility - Magnesium compounds - Semiconducting indium compounds - Thickness control - Voltage measurement;

D O I：

10.1063/1.2906374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg-doped p-type InN layers with different thicknesses were grown under the same growth/doping conditions so that their net acceptor concentrations were almost the same (3-6)x10(18) cm(-3), which were confirmed by electrolyte capacitance-voltage measurements. The conductivity of p-InN region embedded under high density surface electrons could be extracted through the slope of total sheet conductivity against thickness, which was about 8.1 Omega(-1) cm(-1). Then, corresponding hole mobility was determined to be about 17-36 cm(2)/V s for the hole concentrations of about (1.4-3.0)x10(18) cm(-3) obtained by providing the hole effective mass and Mg acceptor activation energy as 0.42m(0) and 61 meV, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

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