Structure-Dependent Ferromagnetism in Mn-Doped III-V Nanowires

被引：38
作者：
Galicka, Marta [1 ]
Buczko, Ryszard [1 ]
Kacman, Perla [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
NANO LETTERS | 2011年 / 11卷 / 08期
关键词：
Diluted magnetic semiconductors; ferromagnetism; nanowires; ab initio calculations; BLENDE GAAS NANOWIRES; STACKING-FAULTS; ZINC BLENDE; SEMICONDUCTOR NANOWIRES; MAGNETIC SEMICONDUCTOR; INAS NANOWIRES; (GA; MN)AS; WURTZITE; GROWTH;
D O I：
10.1021/nl201687q
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The electronic and magnetic properties of (Ga,Mn)As and (In,Mn)As nanowires are studied by ab initio methods. The results suggest that, in contrast to the bulk, in nanowires (In,Mn)As may exhibit better ferromagnetic behavior than (Ga,Mn)As. Moreover, the calculations show that in one-dimensional diluted magnetic semiconductors the distribution of Mn ions and the magnetic order depend crucially on the crystallographic structure. Since the growth of III-V nanowires of a given, either zinc blende or wurtzite, crystal structure is nowadays well controlled, these results can help to find the preferable material and conditions for the growth of ferromagnetic semiconductor nanowires.
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收藏
页码：3319 / 3323
页数：5
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