Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

被引：100
作者：
Lee, Ching-Ting [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
来源：
MATERIALS | 2010年 / 3卷 / 04期
关键词：
ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light; emitting diodes; P-TYPE ZNO; MOLECULAR-BEAM EPITAXY; THIN-FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; ZINC-OXIDE; OXYGEN VACANCIES; SINGLE-CRYSTALS; ZNO/GAN HETEROSTRUCTURE; SPUTTERING PARAMETERS;
D O I：
10.3390/ma3042218
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm(-1) at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.
引用
收藏
页码：2218 / 2259
页数：42
相关论文
共 161 条
[81]   A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature [J].
Liu, DS ;
Wu, CC ;
Lee, CT .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A) :5119-5121
[82]   Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J].
Liu, W ;
Gu, SL ;
Ye, JD ;
Zhu, SM ;
Liu, SM ;
Zhou, X ;
Zhang, R ;
Shi, Y ;
Zheng, YD ;
Hang, Y ;
Zhang, CL .
APPLIED PHYSICS LETTERS, 2006, 88 (09)
[83]   Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD [J].
Liu, Y ;
Gorla, CR ;
Liang, S ;
Emanetoglu, N ;
Lu, Y ;
Shen, H ;
Wraback, M .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) :69-74
[84]   Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes [J].
Long, Hao ;
Fang, Guojia ;
Huang, Huihui ;
Mo, Xiaoming ;
Xia, Wei ;
Dong, Binzhong ;
Meng, Xianquan ;
Zhao, Xingzhong .
APPLIED PHYSICS LETTERS, 2009, 95 (01)
[85]   Electrical properties of bulk ZnO [J].
Look, DC ;
Reynolds, DC ;
Sizelove, JR ;
Jones, RL ;
Litton, CW ;
Cantwell, G ;
Harsch, WC .
SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401
[86]   Residual native shallow donor in ZnO [J].
Look, DC ;
Hemsky, JW ;
Sizelove, JR .
PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555
[87]   As-doped p-type ZnO produced by an evaporation/sputtering process [J].
Look, DC ;
Renlund, GM ;
Burgener, RH ;
Sizelove, JR .
APPLIED PHYSICS LETTERS, 2004, 85 (22) :5269-5271
[88]   Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition [J].
Lorenz, Michael ;
Cao, Bingqiang ;
Zimmermann, Gregor ;
Biehne, Gisela ;
Czekalla, Christian ;
Frenzel, Heiko ;
Brandt, Matthias ;
von Wenckstern, Holger ;
Grundmann, Marius .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03) :1693-1697
[89]   Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates [J].
Lu, Chien-Yuan ;
Chang, Shoou-Jinn ;
Chang, Sheng-Po ;
Lee, Ching-Ting ;
Kuo, Che-Fu ;
Chang, Hong-Ming ;
Chiou, Yu-Zung ;
Hsu, Cheng-Liang ;
Chen, I-Cherng .
APPLIED PHYSICS LETTERS, 2006, 89 (15)
[90]   Control of p- and n-type conductivities in Li-doped ZnO thin films [J].
Lu, J. G. ;
Zhang, Y. Z. ;
Ye, Z. Z. ;
Zeng, Y. J. ;
He, H. P. ;
Zhu, L. P. ;
Huang, J. Y. ;
Wang, L. ;
Yuan, J. ;
Zhao, B. H. ;
Li, X. H. .
APPLIED PHYSICS LETTERS, 2006, 89 (11)
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