Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

被引：100

作者：

Lee, Ching-Ting ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

来源：

MATERIALS | 2010年 / 3卷 / 04期

关键词：

ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light; emitting diodes; P-TYPE ZNO; MOLECULAR-BEAM EPITAXY; THIN-FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; ZINC-OXIDE; OXYGEN VACANCIES; SINGLE-CRYSTALS; ZNO/GAN HETEROSTRUCTURE; SPUTTERING PARAMETERS;

D O I：

10.3390/ma3042218

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm(-1) at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

引用

页码：2218 / 2259

页数：42

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