Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature

被引：62

作者：

Chun, Yoon Soo ^{[1
]}

Chang, Seongpil ^{[2
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Korea Univ, Dept Elect & Elect Engn, Display & Nanosyst Lab, Seoul 136701, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

a-IGZO; Thin film transistor; SiO2; HfO2; High-k; THIN-FILM TRANSISTORS; TRANSPARENT;

D O I：

10.1016/j.mee.2011.01.076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of gate insulators for oxide TFTs have been investigated by two types of a-IGZO TFTs with high-k and low-k oxides. TFTs with low-k oxides have low on-current due to the low-capacitances of the materials. HfO2 has been used as high-k gate insulator, because HfO2 is one of most promising high-k oxides with the high capacitance due to its high dielectric constant. We have fabricated a-IGZO TFTs with SiO2 and HfO2. And their performances are compared, such as mobility, threshold voltage, subthreshold swing, on-to-off current ratio, hysteresis, and bias-sensitivity. TFT with HfO2 gate insulator shows better performances than those of TFT with SiO2 gate insulator. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1590 / 1593

页数：4

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