Adhesion and removal of silica and ceria particles on the wafer surfaces in STI and poly SiCMP

被引：9

作者：

Hong, Yi Koan ^{[1
]}

Kang, Young-Jae ^{[1
]}

Park, Jin-Goo ^{[1
]}

Han, Sang-Yeob ^{[2
]}

Yun, Seong-Kyu ^{[2
]}

Yoon, Bo-Un ^{[2
]}

Hong, Chang-Ki ^{[2
]}

机构：

[1] Hanyang Univ, Dept Met & Mat Engn, Ansan 426791, South Korea

[2] Samsung Elect Co LTD, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, South Korea

来源：

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII | 2008年 / 134卷

关键词：

adhesion force; alumina particle; CuCMP;

D O I：

10.4028/www.scientific.net/SSP.134.159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The purpose of this study is to investigate the effects of slurry pH on the adhesion and removal of silica and ceria abrasive particles on the poly Si, TEOS, SiN and SAC (self aligned memory cell contact) and STI (shallow trench isolation) patterned wafer surfaces. The adhesion force of silica and ceria particles were theoretically and experimentally investigated in STI and poly Si CMP process. A stronger adhesion force was observed for silica particles on the poly Si wafer in acidic rather than in alkaline solutions. The adhesion force of ceria particle was lower than that of silica in investigated pH ranges. STI patterned wafer showed lower adhesion force than SAC patterned wafer. Lower adhesion force between particles and surface resulted in a lower level of particle contamination.

引用

页码：159 / +

页数：2