Study of strain and wetting phenomena in porous silicon by Raman scattering

被引：30

作者：

Ferrara, M. A. ^{[1
,2
]}

Donato, M. G. ^{[3
]}

Sirleto, L. ^{[1
]}

Messina, G. ^{[3
]}

Santango, S. ^{[3
]}

Rendina, I. ^{[1
]}

机构：

[1] Inst Microelect & Microsyst, Natl Res Council, I-80131 Naples, Italy

[2] Univ Mediterranea, DIMET, I-89060 Reggio Di Calabria, Italy

[3] Univ Mediterranea, MECMAT, I-89060 Reggio Di Calabria, Italy

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2008年 / 39卷 / 02期

关键词：

Raman effect; Raman scattering; Raman spectroscopy; scattering measurements;

D O I：

10.1002/jrs.1846

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built-in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions. Copyright (C) 2008 John Wiley & Sons, Ltd.

引用

页码：199 / 204

页数：6

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