Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

被引：15

作者：

Song, Keun-Man ^{[1
]}

Kim, Jong-Min ^{[1
]}

Kang, Bong-Kyun ^{[1
,2
]}

Yoon, Dae-Ho ^{[2
]}

Kang, S. ^{[3
]}

Lee, Sang-Won ^{[4
]}

Lee, Sung-Nam ^{[4
]}

机构：

[1] Korea Adv Nano Fab Ctr KANC, Suwon 90610, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon, South Korea

[3] Samsung LED, Yongin, South Korea

[4] Korea Polytech Univ, Dept Nanoopt, Siheung Si, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

LIGHT-EMITTING-DIODES; SAPPHIRE; TEMPLATES;

D O I：

10.1063/1.4720507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4720507]

引用

页数：4

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