The investigation of optical and electrical properties of N+-implanted amorphous diamond-like carbon (DLC) films

被引:7
作者
Faizrakhmanov, IA [1 ]
Bazarov, VV [1 ]
Zhikharev, VA [1 ]
Khaibullin, IB [1 ]
机构
[1] RAS, Phys Tech Inst, Kazan 420029, Russia
关键词
implantation; diamond-like carbon optical and electrical properties;
D O I
10.1016/S0168-583X(98)00856-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Optical and electrical properties of diamond-like carbon (DLC) films irradiated by N+ ions with energy 25 keV in the dose range from 3x10(14) to 3x10(17) cm(-2) were investigated. It was shown that the dose dependencies of optical and electrical properties of N+-implanted DLC films were different from those for the C+-implanted case in the moderate and high dose ranges due to carbon nitride phase formation. On the basis of dose dependencies three different steps of structural changes of N+-implanted DLC films can be distinguished: transformation of sp(3) + sp(2) mixture to sp(2) and growth of pi-clusters; the nucleation of carbon nitride phase and the decrease of pi-cluster concentration; the growth of carbon nitride nuclei and the decrease of pi-cluster sizes. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:669 / 672
页数:4
相关论文
共 5 条
[1]   Optical and electrical properties of C+-implanted amorphous diamond-like carbon films [J].
Faizrakhmanov, IA ;
Bazarov, VV ;
Zhikharev, VA ;
Khaibullin, IB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :719-722
[2]  
GOATEE K, 1994, J APPL PHYS, V76, P3791
[3]  
Mott N. F., 1971, ELEKTRONNYE PROTSESS, P472
[4]   HARD AMORPHOUS (DIAMOND-LIKE) CARBONS [J].
ROBERTSON, J .
PROGRESS IN SOLID STATE CHEMISTRY, 1991, 21 (04) :199-333
[5]   OBSERVATION OF CRYSTALLINE C3N4 [J].
YU, KM ;
COHEN, ML ;
HALLER, EE ;
HANSEN, WL ;
LIU, AY ;
WU, IC .
PHYSICAL REVIEW B, 1994, 49 (07) :5034-5037