Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

被引：9

作者：

Zhu, Hao ^{[1
,2
]}

Zhao, Erhai ^{[3
]}

Richter, Curt A. ^{[2
]}

Li, Qiliang ^{[1
,2
]}

机构：

[1] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22033 USA

[2] NIST, Semicond & Dimens Metrol Div, Gaithersburg, MD 20899 USA

[3] George Mason Univ, Dept Phys, Fairfax, VA 22033 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 56 (SOTAPOCS 56) | 2014年 / 64卷 / 17期

关键词：

SINGLE DIRAC CONE; SURFACE-STATES; TRANSPORT;

D O I：

10.1149/06417.0051ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Topological insulator is characterized as a new class of materials which have an insulating band gap in the bulk and gapless surface state which is protected by its intrinsic time-reversal symmetry. Here, we report high-performance topological insulator nanowire field effect transistors (FETs) with sharp turn-on, clear cutoff current, large On/Off current ratio (similar to 10(8)) and well-saturated, strong inversion-mode output current-voltage characteristics. The metallic electron transport at surface, with effective mobility of 200 cm(2)V(-1)s(-1) similar to 1000 cm(2)V(-1)s(-1), and bulk conduction, with activation energy close to band gap of bulk Bi2Se3 can be effectively separated and tuned by gated field effect. We also report the first experimental observation of anomalous Aharonov-Bohm oscillation in Bi2Se3 nanowire FET under strong surface disorder. The magnetotransport properties demonstrated here of topological insulator nanostructure provide effective approaches of surface states modulations, and can enable more spintronics device applications and sensing applications.

引用

页码：51 / 59

页数：9

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