Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET's

被引：12

作者：

Niu, GF ^{[1
]}

Chen, RMM ^{[1
]}

Ruan, G ^{[1
]}

机构：

[1] CITY UNIV HONG KONG,DEPT ELECT ENGN,HONG KONG,HONG KONG

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 11期

关键词：

D O I：

10.1109/16.543048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent surface potential models published in this TRANSACTIONS for fully depleted short-channel SOI MOSFET's are compared. The parabolic potential approach is clarified to be a special case of the quasi-2-D approach. An extended quasi-2-D model is also derived.

引用

页码：2034 / 2037

页数：4

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