25 Gbps low-voltage waveguide Si-Ge avalanche photodiode

被引：137

作者：

Huang, Zhihong ^{[1
]}

Li, Cheng ^{[1
]}

Liang, Di ^{[1
]}

Yu, Kunzhi ^{[1
,2
]}

Santori, Charles ^{[1
]}

Fiorentino, Marco ^{[1
]}

Sorin, Wayne ^{[1
]}

Palermo, Samuel ^{[2
]}

Beausoleil, Raymond G. ^{[1
]}

机构：

[1] Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304 USA

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

OPTICA | 2016年 / 3卷 / 08期

关键词：

SILICON; PHOTODETECTOR; RECEIVER; DEVICES;

D O I：

10.1364/OPTICA.3.000793

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon-germanium (Si-Ge)-based avalanche photodiodes (APDs) have shown a significant improvement in receiver sensitivity compared to their III-V counterparts due to the superior impact ionization property of silicon. However, conventional Si-Ge APDs typically operate at high voltages and low speed, limiting the application of this technology to data communication. In this paper, we present a waveguide Si-Ge avalanche photodiode using a thin silicon multiplication region with a breakdown voltage of -10 V, a speed of 25 GHz, and a gain-bandwidth product (GBP) of 276 GHz. At 1550 nm, sensitivities of -25 dBm and -16 dBm are achieved at 12.5 Gbps and 25 Gbps, respectively. This design will enable implementation of Si-Ge APDs for optical interconnects in data centers and high-performance computers, allowing significant reductions in aggregate system laser power (and therefore cost). (C) 2016 Optical Society of America

引用

页码：793 / 798

页数：6

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